Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

✍ Scribed by Staffa, J.; Hwang, D.; Luther, B.; Ruzyllo, J.; Grant, R.

• Book ID: 118183089
• Publisher: American Institute of Physics
• Year: 1995
• Tongue: English
• Weight: 378 KB
• Volume: 67
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.114371