## Abstract The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP~2~ epitaxial layer was measured at temperatures of 10 β 300 K. Within this temperature range the PL emission is dominated by bandβtoβband radiative recombination. The PL intensity
Temperature dependence of secondary electron emission from SiO2-layers
β Scribed by Dr. sc. nat. H.-J. Fitting
- Publisher
- John Wiley and Sons
- Year
- 1980
- Tongue
- English
- Weight
- 164 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Experimental results on the (e,2e) reaction on surfaces of a dielectric (LiF film), a metal (W(110) crystal) and a semiconductor (Si(001) crystal) are presented and discussed. A combined analysis of secondary emission spectra together with the (e,2e) spectra of LiF film allows one to establish a lin
The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are obse
The yields of electron emission from a CsI surface bombarded with very heavy molecular ions have been measured by coincidence counting in time-of-flight mass spectrometry. These ions were produced by the matrix-assisted laser desorption/ionization technique. The masses ranged from 700 to 66 000 Da w