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Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/ InyGa1−yAs/GaAs structures

✍ Scribed by Yu, P. W.; Jogai, B.; Rogers, T. J.; Martin, P. A.; Ballingall, J. M.


Book ID
125420140
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
769 KB
Volume
76
Category
Article
ISSN
0021-8979

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