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Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high electron mobility transistor AlxGa1âxAs/InyGa1âyAs/GaAs structures

✍ Scribed by Yu, P. W.; Jogai, B.; Rogers, T. J.; Martin, P. A.; Ballingall, J. M.

No coin nor oath required. For personal study only.

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Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high electron mobility transistor AlxGa1âxAs/InyGa1âyAs/GaAs structures