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Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

✍ Scribed by Lin, D. Y.; Huang, Y. S.; Shou, T. S.; Tiong, K. K.; Pollak, Fred H.


Book ID
118230476
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
436 KB
Volume
90
Category
Article
ISSN
0021-8979

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Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs=InGaAs=GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional proΓΏles fabricated by molecular beam epitaxy. Signals have been observed from every r