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Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals

โœ Scribed by Gasanly, N M; Aydinli, A; Yuksek, N S


Book ID
121392144
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
296 KB
Volume
14
Category
Article
ISSN
0953-8984

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Temperature and excitation intensity tun
โœ K. Goksen; N. M. Gasanly ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 201 KB

Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm