Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals
โ Scribed by K. Goksen; N. M. Gasanly; R. Turan
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 219 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0232-1300
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Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm
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