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Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals

โœ Scribed by K. Goksen; N.M. Gasanly; A. Seyhan; R. Turan

Book ID
103843457
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
384 KB
Volume
127
Category
Article
ISSN
0921-5107

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Temperature and excitation intensity tun
Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals
โœ K. Goksen; N. M. Gasanly ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 201 KB

Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm