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Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals

โœ Scribed by Isik, M.; Guler, I.; Gasanly, N.M.

Book ID
118015640
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
478 KB
Volume
35
Category
Article
ISSN
0925-3467

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Temperature and excitation intensity tun
Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals
โœ K. Goksen; N. M. Gasanly ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 201 KB

Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm