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Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals

โœ Scribed by N.M. Gasanly

Book ID
116608133
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
207 KB
Volume
509
Category
Article
ISSN
0925-8388

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Photoluminescence spectra of Tl 4 GaIn 3 S 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (ฮป exc = 532 nm), and at T = 26 K with intrinsic excitation source (ฮป exc = 406 nm