Temperature dependence of Raman-active mode frequencies and linewidths in TlGaSe2 layered crystals
β Scribed by N. S. Yuksek; N. M. Gasanly
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 187 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0232-1300
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π SIMILAR VOLUMES
The frequencies and linewidths of five Raman-active modes in a GaS 0.75 Se 0.25 layered crystal have been measured in the 10-300 K temperature range and in the 10-380 cm --1 frequency region. We observed softening and broadening of the optical phonon lines with increasing temperature. The analysis o
Beginning with the mode Gru Γ neisen parameter, the pressure, temperature and concentration dependences of phonon frequency have been derived under the condition of variable Gru Γ neisen parameter with pressure, temperature and composition. Fits to the Raman-active E g mode at %450 cm Γ1 in TiO 2 an