The formation of buried layers by high-d
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A. De Veirman; J. Van Landuyt
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Article
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1989
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Elsevier Science
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English
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The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for