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TEM investigation of thin GaAs/AlxGa1·x As layers

✍ Scribed by A.F. de Jong


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
203 KB
Volume
24
Category
Article
ISSN
0304-3991

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✍ Dr. Zh. I. Alferov; V. M. Andreyev; V. I. Korol'Kov; E. L. Portnoi 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 554 KB

Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n