Ion beam synthesis of buried epitaxial F
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K. Radermacher; S. Mantl; R. Apetz; Ch. Dieker; H. LΓΌth
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Article
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1992
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Elsevier Science
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English
β 333 KB
We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 Β°C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe