𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Synthesis and Photoluminescence of Silica Nanowires Grown on Si Substrate

✍ Scribed by Lian Zhen Cao; Hang Song; Hong Jiang; Huai Xin Lu; Ying De Li; Jia Qiang Zhao


Publisher
Springer
Year
2011
Tongue
English
Weight
430 KB
Volume
21
Category
Article
ISSN
1053-0495

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Optical properties of Ge nanowires grown
✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 199 KB

## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re

Optical properties of Ge nanowires grown
✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 285 KB

## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW –

Time-resolved photoluminescence characte
✍ T. Soga; M. Uehiro; Y. Azuma; M. Yang; T. Jimbo; M. Umeno πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 310 KB

GaAs layers and A1GaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed. The minority carri