## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vaporβliquidβsolid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re
Synthesis and Photoluminescence of Silica Nanowires Grown on Si Substrate
β Scribed by Lian Zhen Cao; Hang Song; Hong Jiang; Huai Xin Lu; Ying De Li; Jia Qiang Zhao
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 430 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1053-0495
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## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at lowβdefect density Ge NW β
GaAs layers and A1GaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed. The minority carri