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Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

โœ Scribed by S. Zemon; S.K. Shastry; P. Norris; C. Jagannath; G. Lambert

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
320 KB
Volume
58
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES

Photoluminescence and photoluminescence
Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
โœ H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 66 KB

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show