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Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces

✍ Scribed by Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
199 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, respectively. The figures are provided by the authors T. I. Kamins (Hewlett‐Packard Laboratories) and L. Tsybeskov (New Jersey Institute of Technology).

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