## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vaporβliquidβsolid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re
Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate
β Scribed by Cao Xia; Ning Wang; Long Wang
- Publisher
- Springer Netherlands
- Year
- 2009
- Tongue
- English
- Weight
- 467 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1388-0764
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π SIMILAR VOLUMES
## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at lowβdefect density Ge NW β
## Abstract A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si(111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer