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Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces

✍ Scribed by Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
285 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW – Si substrate interfaces. Both, PL and RS data indicate that Si–Ge intermixing and strain are more pronounced for the Ge NW – (111) Si interface, while NWs grown on (100) Si substrates are relaxed. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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