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Optical properties of GaN grown on porous silicon substrate

✍ Scribed by Boufaden, T. ;Matoussi, A. ;Guermazi, S. ;Juillaguet, S. ;Toureille, A. ;Mlik, Y. ;El Jani, B.

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 143 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200306740

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## Abstract GaN nano‐ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100–150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the com