𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaN single crystal films on silicon substrates grown by MOVPE

✍ Scribed by Takao Nagatomo; Ichiro Ochiai; Shigeo Ookoshi; Osamu Omoto

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
244 KB
Volume
42
Category
Article
ISSN
0042-207X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth of GaN Films on Porous Silicon by
Growth of GaN Films on Porous Silicon by MOVPE
✍ Missaoui, A. ;Saadoun, M. ;Ezzaouia, H. ;BessaοΏ½s, B. ;Boufaden, T. ;Rebey, A. ;E πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 90 KB πŸ‘ 2 views
Structural Defects of Cubic InGaN/GaN He
Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
✍ Taniyasu, Y. ;Watanabe, Y. ;Lim, D. H. ;Jia, A. W. ;Shimotomai, M. ;Kato, Y. ;Ko πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 161 KB πŸ‘ 2 views

Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)