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Growth of GaN Films on Porous Silicon by MOVPE

✍ Scribed by Missaoui, A. ;Saadoun, M. ;Ezzaouia, H. ;Bessa�s, B. ;Boufaden, T. ;Rebey, A. ;El Jani, B.

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
90 KB
Volume
182
Category
Article
ISSN
0031-8965

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Liquid Phase Epitaxial Growth of Silicon
Liquid Phase Epitaxial Growth of Silicon on Porous Silicon for Photovoltaic Applications
✍ S. Berger; S. Quoizola; A. Fave; A. Ouldabbes; A. Kaminski; S. Perichon; N-E. Ch 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 198 KB 👁 1 views

The aim of this experiment is to grow a thin silicon layer (<50µm) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 µm epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi