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Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

✍ Scribed by Barbara E. Landini


Book ID
107452436
Publisher
Springer US
Year
2000
Tongue
English
Weight
297 KB
Volume
29
Category
Article
ISSN
0361-5235

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Electrical analysis and interface states
✍ Porro, Samuele ;Ciechonski, Rafal R. ;SyvΓ€jΓ€rvi, Mikael ;Yakimova, Rositza πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 244 KB

## Abstract This work has been focused on characterization of thick 4H‐SiC layers produced by sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize the grown material and evaluate the interfacial layer between metal and semiconductor. The characterization study