✦ LIBER ✦
Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers
✍ Scribed by M. Rudziński; P. R. Hageman; A. P. Grzegorczyk; L. Macht; T. C. Rödle; H. F. F. Jos; P. K. Larsen
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 191 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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