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Initial process effects on the surface morphology and structural property of the AlN epilayers

✍ Scribed by Xiaohong Chen; Shuping Li; Junyong Kang

Publisher
Springer US
Year
2008
Tongue
English
Weight
249 KB
Volume
19
Category
Article
ISSN
0957-4522

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The effect of ammonia flow in the AlN sp
The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures
✍ Gamarra, Piero ;Lacam, Cedric ;Magis, Michelle ;Tordjman, Maurice ;Poisson, Mari πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 452 KB

## Abstract During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in