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The effect of CVD growth conditions of 6H-SiC epilayers on Al incorporation

✍ Scribed by V. V. Zelenin; M. L. Korogodskii; A. A. Lebedev

Book ID
110128296
Publisher
Springer
Year
2001
Tongue
English
Weight
49 KB
Volume
35
Category
Article
ISSN
1063-7826

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro