Effect of surface defects on CVD diamond nucleation on 6H SiC
β Scribed by Abraham, S.; McHargue, C.J.; Clausing, R.E.; Heatherly, L.; Hunn, J.D.
- Book ID
- 123036568
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 637 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0925-9635
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## Abstract This article describes growth and characterization of the highest quality reproducible 3CβSiC heteroepitaxial films ever reported. By properly nucleating 3CβSiC growth on top of perfectly onβaxis (0001) 4HβSiC mesa surfaces completely free of atomic scale steps and extended defects, gro
The aim of this work is to elucidate the mechanism involved in the 3C-SiC formation during growth by a vapor-liquid-solid mechanism on 6H-SiC substrate. Polytype selection is shown to occur at the first stage of the experiments, before propane injection into the reactor. The contact of the seed with