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Surface morphology of TiSi2 on silicon

✍ Scribed by Hyeongtag Jeon; R.J. Nemanich


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
473 KB
Volume
184
Category
Article
ISSN
0040-6090

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The reaction mechanism of titanium silicide was investigated for varying amounts, of BF 2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were va