Characteristics of TiSi2contact to BF2-doped single-silicon

✍ Scribed by J. S. Choi; S. H. Paek; Y. S. Hwang; S. H. Choi; D. W. Kim; H. K. Moon; J. K. Chung; W. S. Paek; T. U. Sim; J. G. Lee

• Publisher: Springer
• Year: 1993
• Tongue: English
• Weight: 948 KB
• Volume: 28
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00361150

✦ Synopsis

The reaction mechanism of titanium silicide was investigated for varying amounts, of BF 2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were varied in the range 600-800 ~ for 20 s. C49 TiSi 2 forms at 700~ and almost all of its phase is transformed into C54 TiSi 2 with a very low resistivity value (16 p~ cm) at 800~ When the amount of impurities is increased, the sheet resistance of Ti-silicides also increased while its thickness decreased. The main cause of the thickness reduction of Ti-silicide is the growth of enhanced native oxide. Dopants are chiefly redistributed in the interface between the Ti-silicide and the Si-substrate. It is believed that the formation of titanium boride increases the contact resistance during the Ti-silicide formation for samples annealed at 750~ and 800~