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Surface morphology of the Si(310) substrate used for molecular beam epitaxy of CdHgTe: I. Clean Si(310) surface

โœ Scribed by M. V. Yakushev; D. V. Brunev; K. N. Romanyuk; A. E. Dolbak; A. S. Deryabin; L. V. Mironova; Yu. G. Sidorov


Book ID
110202859
Publisher
Pleiades Publishing
Year
2008
Tongue
English
Weight
268 KB
Volume
2
Category
Article
ISSN
1027-4510

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Growth of n-GaAs layer on a rough surfac
โœ B. Azeza; L. Sfaxi; R. M'ghaieth; A. Fouzri; H. Maaref ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 749 KB

The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer