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Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

✍ Scribed by Z. Y. Xie; C. H. Wei; S. F. Chen; S. Y. Jiang; J. H. Edgar


Book ID
107452505
Publisher
Springer US
Year
2000
Tongue
English
Weight
477 KB
Volume
29
Category
Article
ISSN
0361-5235

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Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show