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Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces

✍ Scribed by J. T. Wolan; B. A. Grayson; J. Kohlscheen; Y. Emirov; R. Schlaf; W. Swartz; S. E. Saddow

Book ID
107452760
Publisher
Springer US
Year
2002
Tongue
English
Weight
234 KB
Volume
31
Category
Article
ISSN
0361-5235

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✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show