✦ LIBER ✦

Surface analysis to study the improvements of silicon nitride/gallium arsenide interface properties

✍ Scribed by S. Cassette; F. Plais; J. Olivier

Publisher: John Wiley and Sons
Year: 1990
Tongue: English
Weight: 437 KB
Volume: 16
Category: Article
ISSN: 0142-2421
DOI: 10.1002/sia.740160112

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

It has been shown that NH~3~, plasma treatment of GaAs surfaces before deposition of plasma‐enhanced chemical vapour deposited silicon nitride significantly improves the SiNH/GaAs interface properties. The decrease of surface state density together with the increase of Fermi level excursion in the energy gap are correlated with chemical spectroscopic measurements.

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