## Abstract It has been shown that NH~3~, plasma treatment of GaAs surfaces before deposition of plasmaβenhanced chemical vapour deposited silicon nitride significantly improves the SiNH/GaAs interface properties. The decrease of surface state density together with the increase of Fermi level excur
Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide
β Scribed by K. Mettler
- Publisher
- Springer
- Year
- 1977
- Tongue
- English
- Weight
- 639 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1432-0630
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