Study of SiO2/Si interface states in MOS devices by surface charge spectroscopy. Application to rapid thermal nitridation of silicon

✍ Scribed by A. Ermolieff; S. Deleonibus; S. Marthon; B. Blanchard; J. Piaguet

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 610 KB
• Volume: 67
• Category: Article
• ISSN: 0368-2048
• DOI: 10.1016/0368-2048(93)02042-k