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Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique : Paul A. Muls, Gilbert J. Declerck and Roger J. van Overstraeten. Solid-St. Electron. 20, 911 (1977)


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
251 KB
Volume
17
Category
Article
ISSN
0026-2714

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