Successful growth of two different quantum dots on one substrate
β Scribed by C.F Tsai; Y.H Chang; J.H Cheng; S.C Yang; C.C Hsu; Y.F Chen; L.C Chen
- Book ID
- 108240616
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 363 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g
In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum d