MBE growth of one-dimensionally ordered AlInAs quantum dots on a patterned GaAs substrate
β Scribed by Nishiwaki, T; Yamaguchi, M; Sawaki, N
- Book ID
- 126522824
- Publisher
- Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 919 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0268-1242
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Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g
In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum d