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Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics

โœ Scribed by Nirmal, D.; Vijayakumar, P.; Thomas, Divya Mary; Jebalin, Binola K.; Mohankumar, N.


Book ID
122749490
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
855 KB
Volume
53
Category
Article
ISSN
0026-2714

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Performance of current mirror with high-
โœ F. Crupi; P. Magnone; A. Pugliese; G. Cappuccino ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 261 KB

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It