✦ LIBER ✦

Gate leakage properties of MOS devices with tri-layer high-k gate dielectric

✍ Scribed by W.B. Chen; J.P. Xu; P.T. Lai; Y.P. Li; S.G. Xu

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 255 KB
Volume: 47
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2006.06.002

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Studies of mist deposited high-k dielect

Studies of mist deposited high-k dielectrics for MOS gates

✍ D.-O Lee; P Roman; C.-T Wu; W Mahoney; M Horn; P Mumbauer; M Brubaker; R Grant; 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 358 KB

A low gate leakage current and small equ

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

✍ C.H. Fu; K.S. Chang-Liao; Y.A. Chang; Y.Y. Hsu; T.H. Tzeng; T.K. Wang; D.W. Heh; 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 779 KB

Integration of HfxTayN metal gate with S

Integration of HfxTayN metal gate with SiO2 and HfOxNy gate dielectrics for MOS device applications

✍ Chang-Ta Yang; Kuei-Shu Chang-Liao; Hsin-Chun Chang; B.S. Sahu; Tzu-Chen Wang; T 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 647 KB

Performance of current mirror with high-

Performance of current mirror with high-k gate dielectrics

✍ F. Crupi; P. Magnone; A. Pugliese; G. Cappuccino 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 261 KB

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It

Structural and interfacial properties of

Structural and interfacial properties of high-k HfOxNy gate dielectric films

✍ G. He; Q. Fang; L.D. Zhang 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 405 KB

The thermal stability and interfacial characteristics for hafnium oxynitride (HfO x N y ) gate dielectrics formed on Si (1 0 0) by plasma oxidation of sputtered HfN films have been investigated. X-ray diffraction results show that the crystallization temperature of nitrogen-incorporated HfO 2 films

Thermal annealing effect on electrical p

Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices

✍ S. Chatterjee; Y. Kuo; J. Lu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 631 KB