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Substrate currents in short buried-channel PMOS devices at cryogenic temperatures

โœ Scribed by M.J. Deen; J. Wang


Book ID
107746213
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
418 KB
Volume
30
Category
Article
ISSN
0011-2275

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Substrate bias effects on drain-induced
โœ Z.X. Yan; M.J. Deen ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 578 KB

Experimental results on the substrate biasing characteristics of drain-induced barrier lowering (DIBL) in short channel PMOS devices with boron ion channel doping at 77 K are presented in detail. It was found that as the channel length decreased, the threshold voltage shift caused by DIBL first incr