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Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devices

โœ Scribed by Deen, M.J.; Yan, Z.X.


Book ID
114536721
Publisher
IEEE
Year
1990
Tongue
English
Weight
735 KB
Volume
37
Category
Article
ISSN
0018-9383

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Substrate bias effects on drain-induced
โœ Z.X. Yan; M.J. Deen ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 578 KB

Experimental results on the substrate biasing characteristics of drain-induced barrier lowering (DIBL) in short channel PMOS devices with boron ion channel doping at 77 K are presented in detail. It was found that as the channel length decreased, the threshold voltage shift caused by DIBL first incr