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Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's

✍ Scribed by Adams, J.A.; Thayne, I.G.; Wilkinson, C.D.W.; Beaumont, S.P.; Johnson, N.P.; Kean, A.K.; Stanley, C.R.

Book ID: 114535132
Publisher: IEEE
Year: 1993
Tongue: English
Weight: 592 KB
Volume: 40
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.214727

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