✦ LIBER ✦

Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications

✍ Scribed by I. Adesida; M. Arafa; K. Ismail; J.O. Chu; B.S. Meyerson

Book ID: 104306249
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 319 KB
Volume: 35
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(96)00088-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Depletion- and enhancement-mode modulati

Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

✍ Dong Xu; Suemitsu, T.; Osaka, J.; Umeda, Y.; Yamane, Y.; Ishii, Y.; Ishii, T.; T 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 213 KB

Capacitance–voltage characteristics and

Capacitance–voltage characteristics and cutoff frequency of pseudomorphic (AlGaAs/InGaAs) modulation-doped field-effect transistor for microwave and high-speed circuit applications

✍ Anju Agrawal; Anisha Goswami; Sujata Sen; R. S. Gupta 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 199 KB 👁 2 views

be easily realized with a single metal insert within a rectangular waveguide. Measured frequency responses of a rectangular waveguide E-plane bandpass filter which used quarterwavelength metallic septa shows 30 dB rejection at 36 GHz. The central resonator was resonant at 36.8 GHz. This kind of reso

An analysis for AlGaN/GaN modulation dop

An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

✍ Sona P. Kumar; Anju Agrawal; Sneha Kabra; Mridula Gupta; R.S. Gupta 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 239 KB

Two-dimensional C-V model of AlGaAs/GaAs

Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications

✍ Sen, S.; Pandey, M.K.; Gupta, R.S. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 235 KB

Transconductance extraction for pseudomo

Transconductance extraction for pseudomorphic modulation-doped field-effect transistor (AlGaAs/InGaAs) for microwave and millimeter-wave applications

✍ Anju Agrawal; Anisha Goswami; Sujata Sen; R. S. Gupta 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 198 KB 👁 2 views

An analytical model for two-dimensional electron gas ( ) 2-DEG for a pseudomorphic Al Ga As r In Ga As modulaz 1 y z y 1 y y tion-doped field-effect transistor is de¨eloped. The 2-DEG density is calculated as a function of de¨ice dimensions and doping density. A simple analytical expression is estab

Doping design of GaN-based heterostructu

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

✍ Maeda, Narihiko ;Tawara, Takehiko ;Saitoh, Tadashi ;Tsubaki, Kotaro ;Kobayashi, 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 144 KB