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Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

✍ Scribed by Dong Xu; Suemitsu, T.; Osaka, J.; Umeda, Y.; Yamane, Y.; Ishii, Y.; Ishii, T.; Tamamura, T.


Book ID
114537988
Publisher
IEEE
Year
2000
Tongue
English
Weight
213 KB
Volume
47
Category
Article
ISSN
0018-9383

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