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Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

✍ Scribed by Jeong, Tae Hoon; Kim, Si Joon; Yoon, Doo Hyun; Jeong, Woong Hee; Kim, Dong Lim; Lim, Hyun Soo; Kim, Hyun Jae

Book ID
127331239
Publisher
Institute of Pure and Applied Physics
Year
2011
Tongue
English
Weight
440 KB
Volume
50
Category
Article
ISSN
0021-4922

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πŸ“œ SIMILAR VOLUMES

The formation of InZnO lattices incorpor
The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process
✍ Si Joon Kim; Dong Lim Kim; You Seung Rim; Woong Hee Jeong; Doo Na Kim; Doo Hyun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 533 KB

We introduce solution-processed BaInZnO (BIZO) thin-film transistors (TFTs) with different atomic percentages of Ba. The effects of incorporating Ba on the InZnO (IZO) lattice were investigated using the hysteresis behavior, thermogravimetry, differential thermal analysis, and X-ray diffraction patt