The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process

✍ Scribed by Si Joon Kim; Dong Lim Kim; You Seung Rim; Woong Hee Jeong; Doo Na Kim; Doo Hyun Yoon; Hyun Jae Kim

• Book ID: 104022354
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 533 KB
• Volume: 326
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.01.088

✦ Synopsis

We introduce solution-processed BaInZnO (BIZO) thin-film transistors (TFTs) with different atomic percentages of Ba. The effects of incorporating Ba on the InZnO (IZO) lattice were investigated using the hysteresis behavior, thermogravimetry, differential thermal analysis, and X-ray diffraction patterns. As the atomic percentage of Ba was increased, the turn-on voltage shifted in a positive direction and the off-current decreased, to about 10 À 11 A. Excess Ba led to degradation of the subthreshold swing. The optimized electrical characteristics of BIZO TFTs were observed with Ba 10% and Ba can replace the Ga in the IZO lattice.