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The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors

✍ Scribed by Kim, Doo Na; Kim, Dong Lim; Kim, Gun Hee; Kim, Si Joon; Rim, You Seung; Jeong, Woong Hee; Kim, Hyun Jae

Book ID
127024276
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
669 KB
Volume
97
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES

The formation of InZnO lattices incorpor
The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process
✍ Si Joon Kim; Dong Lim Kim; You Seung Rim; Woong Hee Jeong; Doo Na Kim; Doo Hyun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 533 KB

We introduce solution-processed BaInZnO (BIZO) thin-film transistors (TFTs) with different atomic percentages of Ba. The effects of incorporating Ba on the InZnO (IZO) lattice were investigated using the hysteresis behavior, thermogravimetry, differential thermal analysis, and X-ray diffraction patt