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Study of trapping phenomenon in 4H-SiC MESFETs: dependence on substrate purity

✍ Scribed by Sghaier, N.; Bluet, J.-M.; Souifi, A.; Guillot, G.; Morvan, E.; Brylinski, C.


Book ID
114616986
Publisher
IEEE
Year
2003
Tongue
English
Weight
326 KB
Volume
50
Category
Article
ISSN
0018-9383

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