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Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

✍ Scribed by Gassoumi, M.; Sghaier, N.; Dermoul, I.; Chekir, F.; Maaref, H.; Bluet, Jean Marie; Guillot, Gérard; Morvan, Erwan; Noblanc, Olivier; Dua, Christian; Brylinski, C.


Book ID
125421140
Publisher
Trans Tech Publications, Ltd.
Year
2004
Tongue
English
Weight
441 KB
Volume
457-460
Category
Article
ISSN
1662-9752

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